Dielectric capping structure overlying a conductive structure to increase stability

ABSTRACT

Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) structure overlying a substrate. A conductive contact directly overlies the substrate and is disposed within the first ILD structure. A conductive wire directly overlies the conductive contact. A conductive capping layer overlies the conductive wire such that the conductive capping layer continuously extends along an upper surface of the conductive wire. A second ILD structure overlies the conductive capping layer. The second ILD structure is disposed along opposing sides of the conductive wire. A pair of air-gaps are disposed within the second ILD structure. The conductive wire is spaced laterally between the pair of air-gaps. A dielectric capping layer is disposed along an upper surface of the conductive capping layer. The dielectric capping layer is spaced laterally between the pair of air-gaps and is laterally offset from an upper surface of the first ILD structure.

REFERENCE TO RELATED APPLICATION

This Application claims the benefit of U.S. Provisional Application Ser.No. 62/949,545, filed on Dec. 18, 2019, the contents of which are herebyincorporated by reference in their entirety.

BACKGROUND

As dimensions and feature sizes of semiconductor integrated circuits(ICs) are scaled down, the density of the elements forming the ICs isincreased and the spacing between elements is reduced. Such spacingreductions are limited by light diffraction of photo-lithography, maskalignment, isolation and device performance among other factors. As thedistance between any two adjacent conductive features decreases, theresulting capacitance increases, which will increase power consumptionand time delay.

To reduce parasitic capacitance and correspondingly improve deviceperformance, IC designers utilize low-k dielectrics. One kind of low-kdielectric is produced by doping silicon oxide (SiO2) with impurities.For example, while pure SiO2 has a dielectric constant of 3.9,fluorinated silica glass in which SiO2 has been doped with fluorine hasa dielectric constant of 3.5. Further, SiO2 which has been doped withcarbon can have a dielectric constant that is further lowered to about3.0. Another kind of low-k material is produced by creating large voidsor pores in a dielectric. Voids can have a dielectric constant of nearly1, thereby reducing the dielectric constant of the porous material byincreasing the porosity of the material. Large pores, also referred toas air-gaps, can provide an extremely low-k dielectric between the twoconductive features.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated chip having a dielectric capping layer overlying conductivewires and air-gaps disposed between adjacent conductive wires.

FIGS. 2A-2D and 3A-3B illustrate cross-sectional views of somealternative embodiments of an integrated chip having a dielectriccapping layer overlying conductive wires and air-gaps disposed betweenadjacent conductive wires.

FIGS. 4-13 illustrate cross-sectional views of some embodiments of amethod of forming an integrated chip having a dielectric capping layeroverlying conductive wires and air-gaps disposed between adjacentconductive wires.

FIG. 14 illustrates a methodology in flowchart format that illustratessome embodiments of a method of forming an integrated chip having adielectric capping layer overlying conductive wires and air-gapsdisposed between adjacent conductive wires.

FIGS. 15-16 illustrate cross-sectional views of some alternativeembodiments of the method of FIGS. 4-13.

FIGS. 17-18 illustrate cross-sectional views of some additionalalternative embodiments of the method of FIGS. 4-13.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Integrated chips may include a number of semiconductor devices (e.g.,transistors, memory devices, etc.) disposed over and/or within asemiconductor substrate. An interconnect structure may be disposed overthe semiconductor substrate. The interconnect structure may includeconductive interconnect layers having conductive wires and conductivevias disposed within an interconnect dielectric structure. Theconductive wires and conductive vias are configured to provideelectrical pathways between different semiconductor devices disposedwithin and/or over the semiconductor substrate. Further, air-gaps areformed in the interconnect dielectric structure between adjacentconductive features, for example between two adjacent conductive wires,to lower a k-value of the interconnect dielectric structure. By reducingthe k-value of the interconnect dielectric structure, the air-gaps canreduce a capacitance between the two adjacent conductive wires andreduce a resistance capacitance (RC) delay in the interconnectstructure.

The conductive interconnect layers of the interconnect structure may beformed by a single or dual damascene process. For example, a layer ofconductive wires may be formed within a lower inter-level dielectric(ILD) structure over the semiconductor substrate. Subsequently, aconductive capping layer is formed along a top surface of eachconductive wire. In some embodiments, the conductive capping layer isconfigured to prevent diffusion of a material (e.g., copper) out of theconductive wires. A dielectric layer is formed over the conductivewires. A patterning process is performed on the dielectric layer and thelower ILD structure to define a plurality of air-gaps between adjacentconductive wires. Further, an upper ILD structure is formed over theconductive wires such that the air-gaps remain between the adjacentconductive wires. However, the patterning process may include exposingthe conductive wires and the conductive capping layers to one or morefluorine-based etchants (e.g., carbon tetrafluoride (e.g., CF₄), sulfurhexafluoride (e.g., SF₆), etc.) and/or chlorine-based etchants (e.g.,boron chloride (e.g, BCl₃), chloride gas (Cl₂), etc.). The one or morechlorine-based etchants may react with the conductive capping layersand/or conductive wires, thereby resulting in the formation of metalions that may easily diffuse to other conductive elements and/ordielectric elements within the interconnect structure. This may resultin time dependent dielectric breakdown (TDDB) of the interconnectdielectric structure, damage to the conductive wires and/or conductivecapping layers (e.g., delamination and/or over-etching of the conductivewires and conductive capping layers), and/or formation of leakage pathsbetween adjacent conductive wires within the interconnect structure,thereby reducing a reliability and performance of the interconnectstructure.

Accordingly, some embodiments of the present disclosure are related toan interconnect structure comprising a capping structure with adielectric capping layer and a conductive capping layer disposed along atop surface of a conductive wire. Further, a method for forming theinterconnect structure according to the present disclosure includesforming a plurality of conductive wires within a lower ILD structure. Aconductive capping layer is formed along a top surface of eachconductive wire. Subsequently, a self-assembled monolayer (SAM) isselectively deposited over an upper surface of the lower ILD structuresuch that the SAM is laterally offset from a top surface of eachconductive capping layer. A dielectric capping layer is selectivelydeposited along the top surface of each conductive capping layer. TheSAM is configured to prevent deposition of the dielectric capping layeralong the upper surface of the lower ILD structure. An etch stop layeris formed over the conductive wires. A patterning process is performedon the etch stop layer and the first ILD structure to define a pluralityof air-gaps between adjacent conductive wires. The patterning processmay include exposing the conductive wires and the conductive cappinglayers to, for example, one or more fluorine-based etchants (e.g.,carbon tetrafluoride (e.g., CF₄), sulfur hexafluoride (e.g., SF₆), etc.)and/or chlorine-based etchants (e.g., boron chloride (e.g., BCl₃),chloride gas (Cl₂), etc.). The dielectric capping layer is configured toprevent damage to the conductive capping layer and/or the conductivewires by the chlorine-based etchants, thereby mitigating a formation ofmetal ions during the patterning process. Further, an upper ILDstructure is formed over the conductive wires such that the air-gapsremain between the adjacent conductive wires. Thus, the air-gaps may beformed between adjacent conductive wires while preventing damage to theconductive capping layer and/or the conductive wires. This, in turn,reduces a capacitance between the adjacent conductive wires and an RCdelay in the interconnect structure while preventing damage to theconductive capping layer and conductive wires, thereby increasing aperformance and reliability of the interconnect structure.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated chip 100 having a dielectric capping layer 114 overlyingconductive wires 106 and air-gaps 119 disposed between adjacentconductive wires 106.

The integrated chip 100 includes an interconnect structure 107 overlyinga substrate 102. The interconnect structure 107 includes an interconnectdielectric structure, a plurality of conductive contacts 103, aplurality of conductive wires 106, and a plurality of conductive vias122. In further embodiments, the interconnect structure 107 may bereferred to as a back-end-of-the-line (BEOL) structure such that theconductive contacts 103 may be referred to as a first BEOL metallizationlayer, the conductive wires 106 may be referred to as a second BEOLmetallization layer, and/or the conductive vias 122 may be referred toas a third BEOL metallization layer. In some embodiments, theinterconnect dielectric structure includes a first inter-leveldielectric (ILD) structure 104, an etch stop layer 116, an upperdielectric layer 118, and a second ILD structure 120. The conductivecontacts 103 comprise a conductive body 108 and a conductive liner 110and are disposed within the first ILD structure 104. In someembodiments, the conductive liner 110 may be configured to reduce and/orprevent diffusion of a diffusive species (e.g., copper and/or aluminum)from the conductive body 108. Further, the conductive contacts 103 maybe configured to electrically couple overlying conductive layers (e.g.,conductive wires 106 and/or conductive vias 122) to a plurality ofsemiconductor devices (e.g., transistors, varactors, etc.) (not shown)disposed over and/or within the substrate 102 and/or doped regions ofthe substrate 102.

The conductive wires 106 overlie the conductive contacts 103 and aredisposed within the first ILD structure 104. The conductive wires 106respectively comprises a conductive body 108 and a conductive liner 110.In some embodiments, a width of the conductive body 108 of theconductive wires 106 is greater than a width of the conductive body 108of the conductive contacts 103. A conductive capping layer 112 isdisposed along an upper surface of each conductive wire 106. Theconductive capping layer 112 is configured to reduce and/or preventdiffusion of the diffusive species from the conductive body 108 tosurrounding structures, such as the first and second ILD structures 104,120. Further, a dielectric capping layer 114 is disposed along an uppersurface of the conductive capping layer 112. The etch stop layer 116overlies the first ILD structure 104. The upper dielectric layer 118extends from an upper surface of the dielectric capping layer 114 tosidewalls of the conductive capping layer 112 and sidewalls of theconductive wires 106. The second ILD structure 120 overlies the upperdielectric layer 118 and comprises a plurality of air-gaps 119. In someembodiments, the air-gaps 119 may be referred to as voids, pores,openings, or the like. The air-gaps 119 are disposed between adjacentconductive wires 106 and are configures to reduce an overall k-value ofthe interconnect dielectric structure. For example, the air-gaps 119 mayreduce the k-value of the second ILD structure 120, thereby reducing acapacitance between the adjacent conductive wires 106 and improving anRC delay in the interconnect structure 107. Further the conductive vias122 are disposed within the second ILD structure 120 and overlie theconductive wires 106. In some embodiments, the conductive vias 122respectively comprise the conductive body 108 and the conductive liner110.

In some embodiments, during fabrication of the integrated chip 100, anetching process is performed into the first ILD structure 104 to defineopenings between adjacent conductive wires 106. The etching process mayinclude exposing the first ILD structure 104 to, for example, one ormore fluorine-based etchants (e.g., carbon tetrafluoride (e.g., CF₄),sulfur hexafluoride (e.g., SF₆), etc.) and/or chlorine-based etchants(e.g., boron chloride (e.g., BCl₃), chloride gas (Cl₂), anotherchlorine-based etchant, or any combination of the foregoing). Thedielectric capping layer 114 is configured to prevent the fluorine-basedetchants and/or chlorine-based etchants from damaging the conductivecapping layer 112 and/or the conductive wires 106, thereby mitigating aformation of metal ions during the etching process. Further, the secondILD structure 120 is formed in such a manner that the air-gaps 119 aredefined in the second ILD structure 120 between the adjacent conductivewires 106. Thus, the air-gaps 119 may be formed between adjacentconductive wires 106 while preventing damage to the conductive cappinglayer 112 and/or the conductive wires 106. This, in turn, reduces acapacitance between the adjacent conductive wires 106 and reduces an RCdelay in the interconnect structure 107 while preventing damage to theconductive capping layer 112 and conductive wires 106, therebyincreasing a performance and reliability of the interconnect structure107.

FIG. 2A illustrates a cross-sectional view of some embodiments of anintegrated chip 200 a having a dielectric capping layer 114 and aconductive capping layer 112 over conductive wires 106.

The integrated chip 200 a includes an interconnect structure 107overlying a substrate 102. The interconnect structure 107 includesmetallization layers (e.g., the conductive contacts 103, the conductivewires 106, the conductive vias 122, etc.) disposed within aninterconnect dielectric structure. The metallization layers areconfigured to electrically couple a semiconductor device 202 disposedwithin and/or over the substrate 102 to other semiconductor devices (notshown) and/or doped regions (not shown). In some embodiments, thesubstrate 102 may, for example, be or comprise a bulk semiconductorsubstrate (e.g., bulk silicon), a silicon-on-insulator (SOI) substrate,or another suitable substrate material. The interconnect dielectricstructure includes the first ILD structure 104, the etch stop layer 116,the upper dielectric layer 118, and the second ILD structure 120. Insome embodiments, the semiconductor device 202 may be configured as atransistor. In such embodiments, the semiconductor device 202 comprisessource/drain regions 204, a gate dielectric layer 206, a gate electrode208, and a sidewall spacer structure 210. The gate dielectric layer 206is disposed between the gate electrode 208 and the substrate 102. Thesource/drain regions 204 are disposed within the substrate 102 onopposing sides of the gate electrode 208. Further, the sidewalls spacerstructure 210 is disposed along sidewalls of the gate electrode 208 andthe gate dielectric layer 206.

The metallization layers disposed within the interconnect structure 107include a plurality of conductive contacts 103 disposed within the firstILD structure 104. The conductive contacts 103 each include a conductivebody 108 and a conductive liner 110. In some embodiments, the conductivebody 108 may, for example, be or comprise aluminum, copper, cobalt,ruthenium, another suitable conductive material, or any combination ofthe foregoing. In further embodiments, the conductive liner 110 may, forexample, be or comprise titanium nitride, tantalum nitride, anothersuitable material, or any combination of the foregoing.

A plurality of conductive wires 106 is disposed over the conductivecontacts 103. The conductive wires 106 each comprise the conductive body108 and the conductive liner 110. In some embodiments, the conductivewires 106 are disposed within a bottommost layer of conductive wireswithin the interconnect structure 107. For example, in such embodiments,other conductive wires (not shown) are not disposed between theconductive wires 106 and the substrate 102. The conductive capping layer112 overlies each conductive wire 106. In some embodiments, theconductive capping layer 112 may, for example, be or comprise copper,cobalt, ruthenium, molybdenum, chromium, tungsten, manganese, rhodium,iridium, nickel, palladium, platinum, silver, gold, aluminum, anothersuitable conductive material, or any combination of the foregoing. Infurther embodiments, a thickness of the conductive capping layer 112 maybe within a range of about 2 to 50 Angstroms, or another suitable value.In various embodiments, the conductive capping layer 112 is configuredto reduce and/or prevent diffusion of a material (e.g., copper and/oraluminum) from the conductive body 108 of each conductive wire 106 tosurrounding structures, such as the first and/or second ILD structures104, 120. For example, during operation and/or fabrication of theintegrated chip 200 a, a heat within the interconnect structure 107 mayincrease, thereby promoting or facilitating diffusion of the material(e.g., copper and/or aluminum) from the conductive body 108 to the firstand second ILD structures 104, 120 and/or another adjacent structure. Byvirtue of the conductive capping layer 112 extending across an uppersurface of each conductive wire 106, diffusion of the material from theconductive body 108 may be mitigated. This increases a reliability ofthe integrated chip 200 a.

A dielectric capping layer 114 overlies the conductive capping layer112. In some embodiments, the dielectric capping layer 114 may, forexample, be or comprise aluminum nitride, aluminum oxynitride, aluminumoxide (e.g., Al₂O₃), silicon oxycarbide, silicon carbon nitride, siliconnitride, silicon carbon oxynitride, silicon dioxide, silicon carbide,silicon oxynitride, another suitable dielectric material, or anycombination of the foregoing. In various embodiments, a thickness of thedielectric capping layer 114 may, for example, be within a range ofabout 2 to 100 Angstroms or another suitable thickness value. Further,during fabrication of the interconnect structure 107, the dielectriccapping layer 114 is configured to prevent damage to the conductivecapping layer 112 and/or the conductive wires 106 from one or morefluorine-based etchants (e.g., carbon tetrafluoride (e.g., CF₄), sulfurhexafluoride (e.g., SF₆), etc.) and/or chlorine-based etchants (e.g.,boron chloride (e.g., BCl₃), chloride gas (Cl₂), another chlorine-basedetchant, or any combination of the foregoing). This, in part, increasesa reliability and endurance of the interconnect structure 107.

An etch stop layer 116 overlies the first ILD structure 104 and thedielectric capping layer 114. An upper dielectric layer 118 extends froman upper surface of the dielectric capping layer 114 to sidewalls of theconductive capping layer 112 and sidewalls of the conductive wires 106.In some embodiments, the etch stop layer 116 and/or the upper dielectriclayer 118 may, for example, respectively be or comprise siliconoxycarbide, silicon carbon nitride, silicon nitride, silicon carbonoxynitride, silicon dioxide, silicon carbide, silicon oxynitride,aluminum nitride, aluminum oxynitride, aluminum oxide, another suitabledielectric material, or any combination of the foregoing. In furtherembodiments, a thickness of the etch stop layer 116 and/or the upperdielectric layer 118 may respectively be within a range of about 5 to200 Angstroms or another suitable thickness value. The second ILDstructure 120 overlies the first ILD structure 104 and a plurality ofconductive vias 122 are disposed within the second ILD structure 120.The conductive vias 122 each comprise the conductive body 108 and theconductive liner 110. Further, the conductive vias 122 may extendthrough the dielectric capping layer 114 to contact an underlyingconductive capping layer 112.

The first and second ILD structures 104, 120 may, for example,respectively be or comprise silicon dioxide, hydrogen-containing siliconoxycarbide (SiCOH), a low-k dielectric material, an extreme low-kdielectric material, another suitable dielectric material, or anycombination of the foregoing. An effective dielectric constant of thefirst and second ILD structures 104, 120 is a function of the dielectricmaterial the layers are comprised of and the physical structure of thelayers. For example, the second ILD structure 120 may have porosity anda plurality of air-gaps 119 that reduces the effective dielectricconstant of the second ILD structure 120. In some embodiments, porosityis void space that is distributed throughout the dielectric material,whereas air-gaps are larger voids in the dielectric layer that wouldotherwise be filled by the dielectric material. In further embodiments,the first ILD structure 104 may comprise air-gaps (not shown) and/or maybe porous, thereby reducing an effective dielectric constant of thefirst ILD structure 104. In some embodiments, the first ILD structure104 and/or the second ILD structure 120 may respectively have aneffective dielectric constant within a range of about 2 to 3.6 oranother suitable range. In yet further embodiments, a porosity of thefirst ILD structure 104 and/or the second ILD structure 120 may, forexample, respectively be within a range of about 0.1% to 40% or anothersuitable value. Thus, by introducing the air-gaps 119 between adjacentconductive wires 106, a capacitance between the adjacent conductivewires 106 is decreased and a performance of the interconnect structure107 is increased. This, in part, is because a dielectric constant ofeach air-gap 119 is about 1. In some embodiments, if the porosity of thefirst and/or second ILD structures 104, 120 is relatively low (e.g.,less than about 0.1%), then an effective dielectric constant of thefirst and/or second ILD structures 104, 120 is not sufficientlydecreased such that capacitance between adjacent conductive wires 106may be increased, thereby decreasing performance of the integrated chip200 a. In further embodiments, if the porosity of the first and/orsecond ILD structures 104, 120 is relatively high (e.g., greater thanabout 40%), then a structural integrity of the first and/or second ILDstructures 104, 120 is decreased and the first and/or second ILDstructures 104, 120 are more susceptible to etch damage.

In some embodiments, a thickness of the dielectric capping layer 114discretely decreases from a first thickness t1 to a second thickness t2in a direction towards the plurality of air-gaps 119. In suchembodiments, the second thickness t2 is less than the first thicknesst1. In yet further embodiments, a center segment of the dielectriccapping layer 114 disposed laterally between an adjacent pair ofair-gaps 119 comprises the second thickness t2.

FIG. 2B illustrates a cross-sectional view of some embodiments of anintegrated chip 200 b according to some alternative embodiments of theintegrated chip 200 a of FIG. 2A, in which a lower surface of eachconductive wire 106 is curved. Further, a width of each air-gap 119continuously decreases from a top surface of the air-gap 119 in adirection towards the substrate 102.

FIG. 2C illustrates a cross-sectional view of some embodiments of anintegrated chip 200 c according to some alternative embodiments of theintegrated chip 200 a of FIG. 2A.

In some embodiments, a contact etch stop layer 212 is disposed betweenthe substrate 102 and a first ILD layer 214. A lower etch stop layer 216overlies the first ILD layer 214 and a second ILD layer 218 overlies thelower etch stop layer 216. A third ILD layer 220 overlies the upperdielectric layer 118 and comprises the air-gaps 119. Further, an upperetch stop layer 222 overlies the third ILD layer 220. In someembodiments, the contact etch stop layer 212, the lower etch stop layer216, and the upper etch stop layer 222 may, for example, respectively beor comprise silicon nitride, silicon carbide, silicon oxynitride,silicon oxycarbide, another dielectric material, or any combination ofthe foregoing and/or may have a thickness within a range of 5 to 200Angstroms or another suitable thickness value. In further embodiments,the first ILD layer 214, the second ILD layer 218, and the third ILDlayer 220 may, for example, respectively be or comprise silicon dioxide,hydrogen-containing silicon oxycarbide (SiCOH), a low-k dielectricmaterial, an extreme low-k dielectric material, another suitabledielectric material, or any combination of the foregoing. In yet furtherembodiments, a porosity of the first ILD layer 214, the second ILD layer218, and the third ILD layer 220 may, for example, respectively bewithin a range of about 0.1% to 40% or another suitable value such thateach layer may have an effective dielectric constant within a range ofabout 2 to 3.6 or another suitable value.

FIG. 2D illustrates a cross-sectional view of some embodiments of anintegrated chip 200 d according to some alternative embodiments of theintegrated chip 200 c of FIG. 2C, in which each conductive wire 106directly overlying a conductive contact 103 share a conductive body 108and a conductive liner 110. This, in some embodiments, may be becausethe conductive contacts 103 and the conductive wires 106 are formedconcurrently by a dual damascene process.

FIG. 3A illustrates a cross-sectional view of some embodiments of anintegrated chip 300 a according to some alternative embodiments of theintegrated chip 200 a of FIG. 2A, in which a plurality of upperconductive wires 302 is disposed within the second ILD structure 120 andoverlies the conductive vias 122. In some embodiments, the conductivevias 122 and the upper conductive wires 302 share a conductive body 108and a conductive liner 110. This, in some embodiments, may be becausethe conductive vias 122 and the upper conductive wires 302 are formedconcurrently by a dual damascene process.

FIG. 3B illustrates a cross-sectional view of some embodiments of anintegrated chip 300 b according to some alternative embodiments of theintegrated chip 300 a of FIG. 3A, in which the plurality of air-gaps 119are laterally offset from a conductive via landing region 304. A firstdistance d1 is defined between a first sidewall 106 as 1 of a firstconductive wire 106 a and a first sidewall 106 bs 1 of a secondconductive wire 106 b, in which the second conductive wire 106 b islaterally adjacent to an air-gap 119. Further, a second distance d2 isdefined between the first sidewall 106 as 1 of the first conductive wire106 a and a second sidewall 106 bs 2 of the second conductive wire 106b. In some embodiments, the first sidewall 106 b 1 of the secondconductive wire 106 b is opposite the second sidewall 106 b 2 of thesecond conductive wire 106 b. In further embodiments, the seconddistance d2 is at least 1.5 times greater than the first distance d1. Insome embodiments, if the second distance d2 is relatively small (e.g.,less than about 1.5*d1), then the second ILD structure 120 may bedamaged by an etch process utilized to form the conductive via 122.This, in part, may be because the etch process may over-etch into anair-gap 119 that is laterally adjacent to the second conductive wire 106b, thereby reducing a structural integrity of the second ILD structure120 and/or shorting adjacent conductive wires 106 to one another. Thus,in some embodiments, a lateral distance of the conducive via landingregion 304 is at least 2 times greater than the first distance d1. Infurther embodiments, if the lateral distance of the conductive vialanding region 304 is relatively small (e.g., less than about 2*d1),then the second ILD structure 120 may be damaged by the etch processutilized to form the conductive via 122.

FIGS. 4-13 illustrate cross-sectional views 400-1300 of some embodimentsof a method of forming an interconnect structure having a dielectriccapping layer overlying conductive wires and air-gaps disposed betweenadjacent conductive wires. Although the cross-sectional views 400-1300shown in FIGS. 4-13 are described with reference to a method, it will beappreciated that the structures shown in FIGS. 4-13 are not limited tothe method but rather may stand alone separate of the method.Furthermore, although FIGS. 4-13 are described as a series of acts, itwill be appreciated that these acts are not limited in that the order ofthe acts can be altered in other embodiments, and the methods disclosedare also applicable to other structures. In other embodiments, some actsthat are illustrated and/or described may be omitted in whole or inpart.

As shown in cross-sectional view 400 of FIG. 4, a plurality ofconductive contacts 103 is formed over a substrate 102 and within afirst inter-level dielectric (ILD) structure 104. In some embodiments,the substrate 102 may, for example, be or comprise a bulk substrate(e.g., a bulk silicon substrate), a silicon-on-insulator (SOI)substrate, or another suitable material. In further embodiments, eachconductive contact 103 includes a conductive body 108 and a conductiveliner 110 laterally surrounding the conductive body 108. In someembodiments, the conductive liner 110 may be configured as a diffusionbarrier layer and/or may, for example, be or comprise titanium nitride,tantalum nitride, another material, or any combination of the foregoing.In some embodiments, the conductive contacts 103 may be formed by a dualdamascene process or a single damascene process. In further embodiments,the conductive contacts 103 are disposed within a first metallizationlayer formed in an interconnect structure overlying the substrate 102(e.g., see FIG. 2A). In further embodiments, the conductive contacts 103may directly overlie, be directly electrically coupled to, and/ordirectly contact doped regions disposed within the substrate 102 and/orsemiconductor devices (not shown) (e.g., transistors) disposedwithin/over the substrate 102.

In some embodiments, a single damascene process for forming theconductive contacts 103 may include: depositing the first ILD structure104 (e.g., by chemical vapor deposition (CVD), physical vapor deposition(PVD), atomic layer deposition (ALD), plasma enhanced CVD (PECVD), oranother suitable deposition or growth process) over the substrate 102;patterning the first ILD structure 104 to define a lower conductivefeature opening within the first ILD structure 104; depositing (e.g., byCVD, PVD, sputtering, electroless plating, etc.) a liner layer withinthe conductive feature opening and depositing (e.g., by CVD, PVD,sputter, electroless plating, etc.) a conductive material over the linerlayer, thereby filling the lower conductive feature opening; andperforming a planarization process (e.g., a chemical mechanicalplanarization (CMP) process) into the conductive material and/or theliner layer, thereby defining the conductive body 108 and the conductiveliner 110 of the conductive contacts 103.

Further, as illustrated in the cross-sectional view 400 of FIG. 4, aplurality of conductive wires 106 are formed over the conductivecontacts 103. In some embodiments, each conductive wire 106 comprises aconductive body 108 and a conductive liner 110 laterally enclosing theconductive body 108 of the conductive wire 106. In some embodiments, theconductive wires 106 may be formed by a single damascene process or adual damascene process. Further, a conductive capping layer 112 isformed along an upper surface of each conductive wire 106, such that theconductive capping layer 112 and the conductive wires 106 are disposedwithin the first ILD structure 104. In further embodiments, theconductive wires 106 are disposed within a second metallization layerformed in an interconnect structure overlying the substrate 102 (e.g.,see FIG. 2A). In such embodiments, the conductive wires 106 are a firstlayer of conductive wires disposed over the substrate 102.

In some embodiments, the conductive capping layer 112 may, for example,be deposited by CVD, PVD, ALD, or another suitable growth or depositionprocess. In some embodiments, the conductive capping layer 112 may, forexample, be or comprise copper, cobalt, ruthenium, molybdenum, chromium,tungsten, manganese, rhodium, iridium, nickel, palladium, platinum,silver, gold, aluminum, another suitable conductive material, or anycombination of the foregoing. In further embodiments, the conductivecapping layer 112 may be formed to a thickness within a range of about 2to 50 Angstroms, or another suitable thickness value. In yet furtherembodiments, the conductive contacts 103 and the conductive wires 106may be formed concurrently by a dual damascene process (e.g., see FIG.2D).

As shown in cross-sectional view 500 of FIG. 5A, a self-assembledmonolayer (SAM) 502 is selectively deposited along an upper surface 104us of the first ILD structure 104. In some embodiments, the SAM 502 isreferred to as a blocking layer. In some embodiments, the SAM 502comprises a head group that adheres or bonds to the first ILD structure104 but not to the conductive capping layer 112. In some embodiments,the SAM 502 may be deposited onto the first ILD structure 104 by spincoating. In further embodiments, a process for forming the SAM 502includes spinning the SAM 502 onto the structure of FIG. 4, upon beingspun onto the structure of FIG. 4 the SAM 502 will adhere to the firstILD structure 104 but not to the conductive capping layer 112. Thus, theSAM 502 is laterally offset from an upper surface 112 us of theconductive capping layer 112. In some embodiments, the SAM 502 may beformed to a thickness within a range of about 2 to 50 Angstroms or toanother suitable thickness value. In yet further embodiments, the SAM502 may be formed by ALD, CVD, spin on, a dipping process, or anothersuitable deposition or growth process. In yet further embodiments,before selectively depositing the SAM 502, a surface treatment processmay be performed on the first ILD structure 104 to remove impuritiesfrom the upper surface 104 us of the first ILD structure 104 and/orprepare the upper surface 104 us of the first ILD structure 104 for theselective deposition of the SAM 502. In yet further embodiments, thesurface treatment process may, for example, include a wet etch process,a dry etch process, a baking process, another suitable process, or anycombination of the foregoing. In further embodiments, the surfacetreatment process may reduce a thickness of the first ILD structure 104.

As shown in cross-sectional view 501 of FIG. 5B, in some embodiments,the SAM 502 is formed over the first ILD structure 104 in such a mannerthat the SAM 502 comprises a head group 504 connected to a terminalgroup 508 (i.e., function group) by way of a molecular chain 506 (i.e.,tail). The head group 504 is configured to adhere to preferred surfacessuch as the upper surface 104 us of the first ILD structure 104 whilenot adhering to other surfaces such as an upper surface (112 us of FIG.5A) of the conductive capping layer (112 of FIG. 5A). In someembodiments, the head group 504 may for example, be or comprisebutyltriethoxysilane, cyclohexyltrimethoxysilane,cyclopentyltrimethoxysilane, dodecyltriethoxysilane,dodecyltrimethoxysilane, decyltriethoxysilane,dimethoxy(methyl)-n-octylsilane, triethoxyethylsilane,ethyltrimethoxysilane, hexyltrimethoxysilane, hexyltriethoxysilane,hexadecyltrimethoxysilane, hexadecyltriethoxysilane,triethoxymethylsilane, trimethoxy(methyl)silane,methoxy(dimethyl)octadecylsilane, methoxy(dimethyl)-n-octylsilane,octadecyltriethoxysilane, triethoxy-n-octylsilane,octadecyltrimethoxysilane, trimethoxy(propyl)silane,trimethoxy-n-octylsilane, triethoxy(propyl)silane, methane, ethane,propane, butane, pentane, hexane, heptane, octane, nonane, decane,undecane, dodecane, pentadecane, hexadecane, any combination of theforegoing, or the like. In further embodiments, the molecular chain 506may, for example, comprise an alkyl chain, such as methylene (CH₂)_(n).In yet further embodiments, the terminal group 508 has a hydrophobicinterfacial property that repels dielectric material, thereby preventingdielectric material from adhering to the SAM 502. In some embodiments,the terminal group 508 may comprise a methyl group (CH₃), which providesthe hydrophobic interfacial property.

As shown in cross-sectional view 600 of FIG. 6, a dielectric cappinglayer 114 is selectively formed over the conductive capping layer 112,such that the dielectric capping layer 114 is not formed over the SAM502. In some embodiments, the dielectric capping layer 114 may, forexample, be or comprise aluminum nitride, aluminum oxynitride, aluminumoxide (e.g., Al₂O₃), silicon oxycarbide, silicon carbon nitride, siliconnitride, silicon carbon oxynitride, silicon dioxide, silicon carbide,silicon oxynitride, another suitable dielectric material, or anycombination of the foregoing. In further embodiments, the dielectriccapping layer 114 is formed to a thickness of about 2 to 100 Angstromsor another suitable thickness value. In some embodiments, the terminalgroup (508 of FIG. 5B) of the SAM 502 comprises the hydrophobic surfacewhich prevents the dielectric capping layer 114 from adhering or bondingto the SAM 502. Thus, in some embodiments, the SAM 502 is configured toprevent and/or block deposition of the dielectric capping layer 114 onthe upper surface of the SAM 502 such that the dielectric capping layer114 may be selectively deposited in areas in which the SAM 502 is notlocated. In further embodiments, the dielectric capping layer 114 isselectively deposited by, for example, CVD, ALD, or another suitabledeposition or growth process. In yet further embodiments, the dielectriccapping layer 114 is configured to prevent damage to the conductivecapping layer 112 and/or the plurality of conductive wires 106 duringsubsequent processing steps (e.g., see FIG. 10).

As shown in cross-sectional view 700 of FIG. 7, a removal process isperformed to remove the SAM (502 of FIG. 6) from the upper surface 104us of the first ILD structure 104. In some embodiments, the removalprocess includes exposing the structure of FIG. 6 to a removal plasma(e.g., hydrogen (H₂)) that is configured to remove the SAM (502 of FIG.6).

As shown in cross-sectional view 800 of FIG. 8, an etch stop layer 116is formed over the first ILD structure 104 and the dielectric cappinglayer 114. In some embodiments, the etch stop layer 116 may be depositedby PVD, CVD, PECVD, ALD, plasma enhanced ALD (PEALD), or anothersuitable growth or deposition process. In some embodiments, the etchstop layer 116 may, for example, be or comprise silicon oxycarbide,silicon carbon nitride, silicon nitride, silicon carbon oxynitride,silicon dioxide, silicon carbide, silicon oxynitride, aluminum nitride,aluminum oxynitride, aluminum oxide, another dielectric material, or anycombination of the foregoing. In further embodiments, the etch stoplayer 116 may be formed to a thickness within a range of about 5 to 200Angstroms or another suitable thickness value.

As shown in cross-sectional view 900 of FIG. 9, a masking layer 902 isformed over the etch stop layer 116. In some embodiments, the maskinglayer 902 may include a hard mask layer, a photoresist, any combinationof the foregoing, or the like.

As shown in cross-sectional view 1000 of FIG. 10, a patterning processis performed on the etch stop layer 116 and the first ILD structure 104according to the masking layer 902, thereby forming a plurality ofopenings 1002 within the first ILD structure 104 and between adjacentconductive wires 106. In some embodiments, the patterning process mayinclude performing a dry etch process, where the dry etch process mayinclude using one or more etchants, such as fluorine-based etchantsand/or chlorine-based etchants. For example, the chlorine-based etchantsmay, for example, be or comprise boron chloride (e.g., BCl₃), chloridegas (Cl₂), a combination of the foregoing, or the like. In addition, thefluorine-based etchants may, for example, be or comprise carbontetrafluoride (e.g., CF₄), sulfur hexafluoride (e.g., SF₆), anycombination of the foregoing, or the like. The dielectric capping layer114 is configured to prevent damage to the conductive capping layer 112and/or the conductive wires 106 by the chlorine-based etchants, therebymitigating and/or preventing formation of metal ions during thepatterning process. This may mitigate and/or prevent time dependentdielectric breakdown (TDDB) of dielectric layers adjacent to theconductive wires 106, delamination of the conductive wires 106 and theconductive capping layer 112, over-etching of the conductive wires 106and the conductive capping layer 112, and/or formation of leakage pathsbetween adjacent conductive wires 106, thereby increasing a reliabilityand performance of the conductive wires 106 and other metallizationlayers (e.g., the conductive contacts 103). Subsequently, a removalprocess is performed to remove the masking layer 902 (not shown). Insome embodiments, the removal process may remove at least a portion ofthe etch stop layer 116, thereby decreasing a thickness of the etch stoplayer 116.

As shown in cross-sectional view 1100 of FIG. 11, an upper dielectriclayer 118 is formed over the etch stop layer 116 and the first ILDstructure 104. In some embodiments, the upper dielectric layer 118 maybe deposited by PVD, CVD, PECVD, ALD, PEALD, or another suitable growthor deposition process. In some embodiments, the upper dielectric layer118 may, for example, be or comprise silicon oxycarbide, silicon carbonnitride, silicon nitride, silicon carbon oxynitride, silicon dioxide,silicon carbide, silicon oxynitride, aluminum nitride, aluminumoxynitride, aluminum oxide, another dielectric material, or anycombination of the foregoing. In further embodiments, the upperdielectric layer 118 may be formed to a thickness within a range ofabout 5 to 200 Angstroms or another suitable thickness value. Further,the upper dielectric layer 118 may be formed such that it lines theopenings 1002.

As shown in cross-sectional view 1200 of FIG. 12, a second ILD structure120 is formed over the upper dielectric layer 118. The second ILDstructure 120 may, for example, be or comprise silicon dioxide,hydrogen-containing silicon oxycarbide (SiCOH), a low-k dielectricmaterial, an extreme low-k dielectric material, another suitabledielectric material, or any combination of the foregoing. Further, thesecond ILD structure 120 comprises a plurality of air-gaps 119, wherethe air-gaps 119 are disposed between adjacent conductive wires 106. Theair-gaps 119 are configured to reduce an effective dielectric constantof the second ILD structure 120, such that, in some embodiments, theeffective dielectric constant of the second ILD structure 120 is withina range of about 2 to 3.6 or another suitable range. By reducing thedielectric constant between adjacent conductive wires 106, a capacitancebetween the adjacent conductive wires 106 is reduced, thereby increasinga performance of the conductive wires 106 and the conductive contacts103. In yet further embodiments, a porosity of the second ILD structure120 may, for example, be within a range of about 0.1% to 40% or anothersuitable value.

In some embodiments, the air-gaps 119 may be introduced in the secondILD structure 120 by choosing a suitable formation process. A suitableprocess for forming the second ILD structure 120 with air-gaps 119 canbe a non-conformal deposition process such as, for example, plasmaenhanced chemical vapor deposition (PECVD). Non-conformal depositionprocesses creates air-gaps 119 in recessed areas such as betweenadjacent conductive wires 106 (e.g., in the location of the openings1002 of FIG. 11). An exemplary non-conformal deposition process isplasma-enhanced CVD, however, other deposition or growth processes areamenable. In some embodiments, by forming the second ILD structure 120with a porosity within a range of about 0.1% to 40%, an effectivedielectric constant of the second ILD structure 120 may be within arange of about 2 to 3.6.

As shown in cross-sectional view 1300 of FIG. 13, a plurality ofconductive vias 122 is formed over the plurality of conductive wires106. The conductive vias 122 extend through the second ILD structure 120to contact the conductive capping layer 112, such that the conductivevias 122 are electrically coupled to the conductive wires 106. In someembodiments, the conductive vias 122 are formed by a single damasceneprocess or a dual damascene process. In yet further embodiments, theconductive vias 122 each comprise a conductive body 108 and a conductiveliner 110 that laterally encloses the conductive body 108.

FIG. 14 illustrates a method 1400 of forming an interconnect structurehaving a dielectric capping layer overlying conductive wires andair-gaps disposed between adjacent conductive wires according to thepresent disclosure. Although the method 1400 is illustrated and/ordescribed as a series of acts or events, it will be appreciated that themethod 1400 is not limited to the illustrated ordering or acts. Thus, insome embodiments, the acts may be carried out in different orders thanillustrated, and/or may be carried out concurrently. Further, in someembodiments, the illustrated acts or events may be subdivided intomultiple acts or events, which may be carried out at separate times orconcurrently with other acts or sub-acts. In some embodiments, someillustrated acts or events may be omitted, and other un-illustrated actsor events may be included.

At act 1402, a plurality of conductive contacts is formed over asubstrate and within a first inter-level dielectric (ILD) structure.FIG. 4 illustrates a cross-sectional view 400 corresponding to someembodiments of act 1402.

At act 1404, a plurality of conductive wires is formed over theconductive contacts and within the first ILD structure. FIG. 4illustrates a cross-sectional view 400 corresponding to some embodimentsof act 1404.

At act 1406, a conductive capping layer is formed over each conductivewire. FIG. 4 illustrates a cross-sectional view 400 corresponding tosome embodiments of act 1406.

At act 1408, a self-assembled monolayer (SAM) is selectively depositedalong an upper surface of the first ILD structure. FIG. 5A illustrates across-sectional view 500 corresponding to some embodiments of act 1408.

At act 1410, a dielectric capping layer is selectively deposited overthe conductive capping layer, where the SAM is configured to blockdeposition of the dielectric capping layer along an upper surface of theSAM. FIG. 6 illustrates a cross-sectional view 600 corresponding to someembodiments of act 1410.

At act 1412, an etch stop layer is deposited over the dielectric cappinglayer and the first ILD structure. FIG. 8 illustrates a cross-sectionalview 800 corresponding to some embodiments of act 1412.

At act 1414, the etch stop layer and the first ILD structure arepatterned, thereby forming a plurality of openings between adjacentconductive wires. FIG. 10 illustrates a cross-sectional view 1000corresponding to some embodiments of act 1414.

At act 1416, an upper dielectric layer is formed over the first ILDstructure and the etch stop layer such that the upper dielectric layerlines the openings. FIG. 11 illustrates a cross-sectional view 1100corresponding to some embodiments of act 1416.

At act 1418, a second ILD structure is formed over the upper dielectriclayer such that the second ILD structure comprises a plurality ofair-gaps disposed laterally between adjacent conductive wires. FIG. 12illustrates a cross-sectional view 1200 corresponding to someembodiments of act 1418.

At act 1420, a plurality of conductive vias is formed over the pluralityof conductive wires. FIG. 13 illustrates a cross-sectional view 1300corresponding to some embodiments of act 1420.

FIGS. 15-16 illustrate cross-sectional views 1500-1600 of someembodiments of acts that may be performed in place of the acts at FIGS.5A-7, such that the method of FIGS. 4-13 may alternatively proceed fromFIG. 4 to FIGS. 15-16 and then from FIG. 16 to FIGS. 8-13 (skippingFIGS. 5A-7). In yet further embodiments, FIGS. 15-16 illustratecross-sectional views 1500-1600 of some alternative embodiments ofselectively forming a dielectric capping layer 114 over the conductivecapping layer 112.

As illustrated by the cross-sectional view 1500 of FIG. 15, a dielectriccapping layer 114 is deposited over the first ILD structure 104 and theconductive capping layer 112. Subsequently, a masking layer 1502 isformed over the dielectric capping layer 114. In some embodiments, themasking layer 1502 is formed such that it directly overlies acorresponding conductive wire 106. In further embodiments, thedielectric capping layer 114 may be deposited by CVD, ALD, or anothersuitable growth or deposition process. In some embodiments, thedielectric capping layer 114 may, for example, be or comprise aluminumnitride, aluminum oxynitride, aluminum oxide (e.g., Al₂O₃), siliconoxycarbide, silicon carbon nitride, silicon nitride, silicon carbonoxynitride, silicon dioxide, silicon carbide, silicon oxynitride,another suitable dielectric material, or any combination of theforegoing. In further embodiments, the dielectric capping layer 114 isformed to a thickness of about 2 to 100 Angstroms or another suitablethickness value.

As illustrated by the cross-sectional view 1600 of FIG. 16, a patterningprocess is performed on the dielectric capping layer 114 according tothe masking layer (1502 of FIG. 15). In some embodiments, the patterningprocess includes performing a dry etch process, a wet etch process,another suitable etch process, or any combination of the foregoing.Further, in some embodiments, the patterning process is performed suchthat the dielectric capping layer 114 is removed from the upper surface104 us of the first ILD structure 104.

FIGS. 17-18 illustrate cross-sectional views 1700-1800 of someembodiments of acts that may be performed in place of the acts at FIGS.5A-7, such that the method of FIGS. 4-13 may alternatively proceed fromFIG. 4 to FIGS. 17-18 and then from FIG. 18 to FIGS. 8-13 (skippingFIGS. 5A-7). In yet further embodiments, FIGS. 17-18 illustratecross-sectional views 1700-1800 of some alternative embodiments ofselectively forming a dielectric capping layer 114 over the conductivecapping layer 112.

As illustrated by the cross-sectional view 1700 of FIG. 17, a maskinglayer 1702 is formed over the first ILD structure 104. In someembodiments, the masking layer 1702 may be formed such that it islaterally offset from the conductive capping layer 112 and comprisessidewalls defining a plurality of openings that are spaced directly overa corresponding conductive wire 106. In such embodiments, the maskinglayer 1702 is selectively deposited on the upper surface 104 us of thefirst ILD structure 104. Subsequently, the dielectric capping layer 114is deposited over the masking layer 1702 and the conductive cappinglayer 112. In some embodiments, the dielectric capping layer 114 may,for example, be deposited by CVD, PVD, or another suitable deposition orgrowth process.

As illustrated by the cross-sectional view 1800 of FIG. 18, a removalprocess is performed on the dielectric capping layer 114 to remove thedielectric capping layer 114 from above the masking layer (1702 of FIG.17). In some embodiments, the removal process includes performing aplanarization process (e.g., a chemical mechanical planarization (CMP)process) into the dielectric capping 114 and/or the masking layer (1702of FIG. 17). In yet further embodiments, the removal process includesperforming a wet etch process, a dry etch process, or another suitableetch process on the dielectric capping later 114. In yet furtherembodiments, the removal process is configured to remove the maskinglayer (1702 of FIG. 17) from the upper surface 104 us of the first ILDstructure 104.

Accordingly, in some embodiments, the present application relates to aconductive wire overlying a substrate, a conductive capping layeroverlying the conductive wire, and a dielectric capping layer overlyingthe conductive capping layer. Further, an inter-level dielectric (ILD)structure overlies the conductive wire such that a pair of air-gaps aredisposed within the ILD structure. The conductive wire is spacedlaterally between the pair of air-gaps.

In various embodiments, the present application provides a semiconductorstructure comprising: a first inter-level dielectric (ILD) structureoverlying a substrate; a conductive contact directly overlying thesubstrate and disposed within the first ILD structure; a conductive wiredirectly overlying the conductive contact; a conductive capping layeroverlying the conductive wire, wherein the conductive capping layercontinuously extends along an upper surface of the conductive wire; asecond ILD structure overlying the conductive capping layer, wherein thesecond ILD structure is disposed along opposing sides of the conductivewire; a pair of air-gaps disposed within the second ILD structure,wherein the conductive wire is spaced laterally between the pair ofair-gaps; and a dielectric capping layer disposed along an upper surfaceof the conductive capping layer, wherein the dielectric capping layer isspaced laterally between the pair of air-gaps, wherein the dielectriccapping layer is laterally offset from an upper surface of the first ILDstructure, wherein a bottom surface of the dielectric capping layer isaligned vertically with the upper surface of the first ILD structure.

In various embodiments, the present application provides an integratedchip comprising: an interconnect dielectric structure overlying asubstrate; a plurality of conductive contacts overlying the substrateand disposed within the interconnect dielectric structure; a pluralityof conductive wires directly overlying the plurality of conductivecontacts and disposed within the interconnect dielectric structure,wherein the conductive wires and the conductive contacts respectivelycomprises a conductive body and a conductive liner that laterallyencloses the conductive body; a conductive capping layer disposed alongan upper surface of each conductive wire; a plurality of air-gapsdisposed within the interconnect dielectric structure, wherein theair-gaps are spaced laterally between adjacent conductive wires in theplurality of conductive wires, wherein a top surface of the plurality ofair-gaps is disposed above a top surface of the conductive cappinglayer; and a dielectric capping layer disposed along an upper surface ofthe conductive capping layer such that the dielectric capping layeroverlies each conductive wire, wherein a thickness of the dielectriccapping layer discretely decreases from a first sidewall of theplurality of conductive wires to a second sidewall of the plurality ofconductive wires in a direction towards the plurality of air-gaps,wherein sidewalls of the dielectric capping layer are aligned withsidewalls of the conductive capping layer, and wherein the dielectriccapping layer directly contacts the conductive capping layer.

In various embodiments, the present application provides a method offorming a semiconductor device, comprising: forming a first inter-leveldielectric (ILD) structure over a substrate; forming a plurality ofconductive contacts within the first ILD structure; forming a pluralityof conductive wires within the first ILD structure and over theplurality of conductive contacts; forming a conductive capping layeralong an upper surface of each conductive wire; selectively depositing adielectric capping layer over the conductive capping layer such that thedielectric capping layer is laterally offset from an upper surface ofthe first ILD structure, wherein a thickness of the dielectric cappinglayer is greater than a thickness of the conductive capping layer;forming an etch stop layer over the dielectric capping layer such thatthe etch stop layer extends from the upper surface of the first ILDstructure, along a sidewall of the dielectric capping layer, to an uppersurface of the dielectric capping layer; patterning the etch stop layerand the first ILD structure, thereby defining a plurality of openingsdisposed laterally between adjacent conductive wires within theplurality of conductive wires; forming an upper dielectric layer alongsidewalls of the conductive wires and an upper surface of the etch stoplayer such that the upper dielectric layer lines the plurality ofopenings; and forming a second ILD structure over the plurality ofconductive wires such that the second ILD structure comprises aplurality of air-gaps spaced laterally between adjacent conductive wireswithin the plurality of conductive wires, wherein a bottom surface ofthe second ILD structure is disposed below a top surface of the firstILD structure, and wherein the second ILD structure is formed such thatthe air-gaps are disposed within the openings.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming a semiconductor device,comprising: forming a first inter-level dielectric (ILD) structure overa substrate; forming a plurality of conductive contacts within the firstILD structure; forming a plurality of conductive wires within the firstILD structure and over the plurality of conductive contacts; forming aconductive capping layer along an upper surface of each conductive wire;selectively depositing a dielectric capping layer over the conductivecapping layer such that the dielectric capping layer is laterally offsetfrom an upper surface of the first ILD structure, wherein a firstthickness of the dielectric capping layer is greater than a thickness ofthe conductive capping layer; forming an etch stop layer over thedielectric capping layer such that the etch stop layer extends from theupper surface of the first ILD structure, along a sidewall of thedielectric capping layer, to an upper surface of the dielectric cappinglayer; patterning the etch stop layer and the first ILD structure,thereby defining a plurality of openings disposed laterally betweenadjacent conductive wires within the plurality of conductive wires;forming an upper dielectric layer along sidewalls of the conductivewires and an upper surface of the etch stop layer such that the upperdielectric layer lines the plurality of openings, wherein the upperdielectric layer contacts a top surface of the dielectric capping layerand has a top surface vertically above the etch stop layer; and forminga second ILD structure over the plurality of conductive wires such thatthe second ILD structure comprises a plurality of air-gaps spacedlaterally between adjacent conductive wires within the plurality ofconductive wires, wherein a bottom surface of the second ILD structureis disposed below a top surface of the first ILD structure, and whereinthe second ILD structure is formed such that the air-gaps are disposedwithin the openings.
 2. The method of claim 1, further comprising:selectively depositing a self-assembled monolayer (SAM) along the uppersurface of the first ILD structure such that the SAM is offset from theconductive capping layer; and wherein the dielectric capping layer isselectively deposited with the SAM in place.
 3. The method of claim 2,wherein the SAM is configured to prevent deposition of the dielectriccapping layer along the first ILD structure.
 4. The method of claim 1,wherein the patterning removes at least a portion of the dielectriccapping layer such that the dielectric capping layer has a secondthickness less than the first thickness, wherein the first and secondthicknesses are respectively non-zero, wherein the second thicknessoverlies a first sidewall of a conductive wire in the plurality ofconductive wires that is adjacent to the plurality of air-gaps.
 5. Themethod of claim 1, wherein the upper dielectric layer is formed afterpatterning the etch stop layer and the first ILD structure.
 6. A methodof forming a semiconductor device, comprising: forming a firstconductive wire and a second conductive wire within a first dielectricstructure; selectively depositing a dielectric capping layer over thefirst conductive wire and the second conductive wire such that thedielectric capping layer is separated from a top surface of the firstdielectric structure; depositing an etch stop layer along the dielectriccapping layer and the top surface of the first dielectric structure;performing an etching process on the etch stop layer, the firstdielectric structure, and the dielectric capping layer to define anopening disposed laterally between the first conductive wire and thesecond conductive wire, wherein after the etching process the dielectriccapping layer has a first thickness over a first side of the firstconductive wire and a second thickness over a second side of the firstconductive wire, wherein the first thickness is greater than the secondthickness; and depositing a second dielectric structure over the firstdielectric structure and within the opening, wherein an air-gap isdisposed within the second dielectric structure and is laterally betweenthe first conductive wire and the second conductive wire.
 7. The methodof claim 6, wherein the first and second thicknesses are respectivelygreater than zero.
 8. The method of claim 6, wherein before selectivelydepositing the dielectric capping layer, a self-assembled monolayer(SAM) is selectively deposited along the top surface of the firstdielectric structure such that the SAM is separated from the firstconductive wire and the second conductive wire.
 9. The method of claim8, further comprising: forming a conductive capping layer along topsurfaces of the first conductive wire and the second conductive wire,wherein the dielectric capping layer directly contacts a top surface ofthe conductive capping layer.
 10. The method of claim 9, wherein the SAMis selectively deposited such that the SAM is not deposited along thetop surface of the conductive capping layer.
 11. The method of claim 9,wherein the dielectric capping layer is selectively deposited such thata thickness of the dielectric capping layer is greater than a thicknessof the conductive capping layer.
 12. The method of claim 9, wherein thetop surface of the conductive capping layer is vertically aligned withthe top surface of the first dielectric structure.
 13. The method ofclaim 6, further comprising: forming an upper dielectric layer betweenthe etch stop layer and the second dielectric structure, wherein theupper dielectric layer is disposed between the air-gap and the firstconductive wire and the second conductive wire, wherein the upperdielectric layer is formed after performing the etching process andbefore depositing the second dielectric structure.
 14. A method offorming a semiconductor device, comprising: forming a plurality ofconductive wires within a first dielectric structure; forming aconductive capping layer along a top surface of the plurality ofconductive wires, wherein a top surface of the conductive capping layeris aligned with a top surface of the first dielectric structure;depositing a self-assembled monolayer (SAM) along the top surface of thefirst dielectric structure; depositing a dielectric capping layer alongthe top surface of the conductive capping layer while the SAM isdisposed along the first dielectric structure, wherein the dielectriccapping layer is separated from the first dielectric structure; removingthe SAM from over the first dielectric structure; forming an upperdielectric layer over the dielectric capping layer and the firstdielectric structure, wherein the upper dielectric layer is formed afterforming the dielectric capping layer; and forming a second dielectricstructure over the dielectric capping layer and the plurality ofconductive wires such that a bottom surface of the second dielectricstructure is disposed below the top surface of the conductive wires,wherein the upper dielectric layer continuously laterally extends alongthe bottom surface of the second dielectric structure.
 15. The method ofclaim 14, wherein the SAM is configured to prevent deposition of thedielectric capping layer on the first dielectric structure.
 16. Themethod of claim 14, further comprising: forming an etch stop layer alongthe first dielectric structure and the dielectric capping layer.
 17. Themethod of claim 16, wherein forming the second dielectric structurecomprises: performing an etch process on the etch stop layer and thefirst dielectric structure, thereby defining a plurality of openingsbetween adjacent conductive wires in the plurality of conductive wires;and depositing the second dielectric structure over the first dielectricstructure and within the plurality of openings such that a plurality ofair-gaps is disposed within the openings.
 18. The method of claim 17,wherein the etch process includes exposing the etch stop layer and thefirst dielectric structure to one or more chlorine-based etchants. 19.The method of claim 17, wherein the etch process removes a portion ofthe dielectric capping layer and defines an upper surface of thedielectric capping layer, wherein the upper surface of the dielectriccapping layer is disposed vertically below a top surface of thedielectric capping layer by a non-zero distance.
 20. The method of claim14, wherein the upper dielectric layer has a top surface disposed abovea top surface of the dielectric capping layer.